Predicting intrinsic antiferromagnetic and ferroelastic MnF₄ monolayer with controllable magnetization

Two-dimensional (2D) multiferroic materials with controllable magnetism have promising prospects in miniaturized quantum device applications, such as high-density data storage and spintronic devices. Here, using first-principles calculations, we propose a coexistence of antiferromagnetism ferroelasticity $MnF_{4}$ monolayer. The monolayer is found to be an intrinsic wide-gap semiconductor large spin polarization ~3 $\mu_{B}$/Mn, which the antiferromagnetic order originates from cooperation competition direct exchange super exchange. also characterized by strongly uniaxial magnetic anisotropic behavior, that can manipulated reversible ferroelastic strain carrier doping. Remarkably, doping not only leads ferromagnetic phase transformation, bult could switch easy magnetization axis between in-plane out-of-plane directions. In addition, N\'eel temperature was evaluated about 140 K Monte Carlo simulations based on Heisenberg model. combination properties provides platform for studying magnetoelastic effects, brings new concepts next-generation nonvolatile memory multi-stage storage.